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Product Description: NCHAN 20A 500V 0.27OHM TO-247
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
20 Amps
Drain Source Voltage Vds
500 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
270 MilliOhms
Turn on Delay Time
18 NanoSeconds
Rise Time tr
59 NanoSeconds
Turn off Delay Time
110 NanoSeconds
Fall Time tf
58 NanoSeconds
trr
570 NanoSeconds

Vishay

Item Number FB190SA10
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Product Description: NCHAN,SOT-227,100V,190A,0.0065OHM, RoHS, Replaces FB180SA10
Package
SOT-227
Drain Current Id(rms)
190 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3.3 Volts DC
Gate Leakage Current
0.2 MicroAmps
rDS(on)
6.5 MilliOhms
Turn on Delay Time
45 NanoSeconds
Rise Time tr
351 NanoSeconds
Turn off Delay Time
181 NanoSeconds
Fall Time tf
335 NanoSeconds
trr
300 NanoSeconds
RoHS
Yes

Vishay

Item Number IRF540PBF
SeriesTO-220
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Product Description: NCHAN 28A 100V 0.077OHM TO-220AB
Package
TO-220AB
Circuit Type
N-Channel
Drain Current Id(rms)
28 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
77 MilliOhms
Turn on Delay Time
11 NanoSeconds
Rise Time tr
44 NanoSeconds
Turn off Delay Time
53 NanoSeconds
Fall Time tf
43 NanoSeconds
trr
180 NanoSeconds
RoHS
Yes

Vishay

Item Number IRF9520PBF
SeriesTO-220
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Product Description: PCHAN, TO-220AB, 100V
Package
TO-220AB
Circuit Type
P-Channel
Drain Current Id(rms)
6.8 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
600 MilliOhms
Turn on Delay Time
9.6 NanoSeconds
Rise Time tr
29 NanoSeconds
Turn off Delay Time
21 NanoSeconds
Fall Time tf
25 NanoSeconds
trr
98 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFD014PBF
SeriesHVMDIP
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Product Description: NCHAN, HEXDIP, 60V
Package
HVMDIP
Circuit Type
N-Channel
Drain Current Id(rms)
1.7 Amps
Drain Source Voltage Vds
60 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
200 MilliOhms
Turn on Delay Time
10 NanoSeconds
Rise Time tr
50 NanoSeconds
Turn off Delay Time
13 NanoSeconds
Fall Time tf
19 NanoSeconds
trr
70 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFD024
SeriesHVMDIP
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Product Description: NCHAN 2.5A 60V 0.10OHM HD-1
Package
HVMDIP
Circuit Type
N-Channel
Drain Current Id(rms)
2.5 Amps
Drain Source Voltage Vds
60 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
100 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
58 NanoSeconds
Turn off Delay Time
25 NanoSeconds
Fall Time tf
42 NanoSeconds
trr
80 NanoSeconds

Vishay

Item Number IRFD9120PBF
SeriesHVMDIP
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Product Description: PCHAN, HEXDIP, 100V
Package
HVMDIP
Circuit Type
P-Channel
Drain Current Id(rms)
1 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
600 MilliOhms
Turn on Delay Time
9.6 NanoSeconds
Rise Time tr
29 NanoSeconds
Turn off Delay Time
21 NanoSeconds
Fall Time tf
25 NanoSeconds
trr
98 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFIB6N60APBF
SeriesFULLPAK
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Product Description: NCHAN, TO-220F, 600V, 5.5A
Package
TO-220 FULLPAK
Circuit Type
N-Channel
Drain Current Id(rms)
5.5 Amps
Drain Source Voltage Vds
600 Volts DC
Gate Source Voltage Vgss
30 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
750 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
25 NanoSeconds
Turn off Delay Time
30 NanoSeconds
Fall Time tf
22 NanoSeconds
trr
530 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFP264PBF
SeriesTO-247AC
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Product Description: NCHAN, TO-247AC, 250V, 38A
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
38 Amps
Drain Source Voltage Vds
250 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
75 MilliOhms
Turn on Delay Time
22 NanoSeconds
Rise Time tr
99 NanoSeconds
Turn off Delay Time
110 NanoSeconds
Fall Time tf
92 NanoSeconds
trr
410 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFP350PBF
SeriesTO-247AC
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Product Description: NCHAN, TO-247AC, 400V, 16A
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
16 Amps
Drain Source Voltage Vds
400 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
300 MilliOhms
Turn on Delay Time
16 NanoSeconds
Rise Time tr
49 NanoSeconds
Turn off Delay Time
87 NanoSeconds
Fall Time tf
47 NanoSeconds
trr
380 NanoSeconds
RoHS
Yes

Infineon

Item Number SPW20N60S5
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$12.41
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Product Description: Transistor, 20A, 600V, TO-247
Drain Current Id(rms)
20 Amps
Drain Source Voltage Vds
600 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
4.5 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
190 MilliOhms
Turn on Delay Time
120 NanoSeconds
Rise Time tr
25 NanoSeconds
Turn off Delay Time
130 NanoSeconds
Fall Time tf
30 NanoSeconds
trr
610 NanoSeconds
RoHS
Yes
Product Description: MOSFET MODULE
Drain Current Id(rms)
100 Amps
Source Current Is(rms)
100 Amps
Drain Source Voltage Vds
75 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
1.65 MilliOhms
Vds(on)
0.165 Volts DC
Turn on Delay Time
450 NanoSeconds
Rise Time tr
400 NanoSeconds
Turn off Delay Time
600 NanoSeconds
Fall Time tf
400 NanoSeconds
trr
200 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
100 Amps
Source Current Is(rms)
100 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
3.3 MilliOhms
Vds(on)
0.33 Volts DC
Turn on Delay Time
400 NanoSeconds
Rise Time tr
300 NanoSeconds
Turn off Delay Time
400 NanoSeconds
Fall Time tf
300 NanoSeconds
trr
250 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
100 Amps
Source Current Is(rms)
100 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
6.6 MilliOhms
Vds(on)
0.66 Volts DC
Turn on Delay Time
400 NanoSeconds
Rise Time tr
250 NanoSeconds
Turn off Delay Time
450 NanoSeconds
Fall Time tf
200 NanoSeconds
trr
200 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
200 Amps
Source Current Is(rms)
200 Amps
Drain Source Voltage Vds
75 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
1.1 MilliOhms
Vds(on)
0.22 Volts DC
Turn on Delay Time
450 NanoSeconds
Rise Time tr
500 NanoSeconds
Turn off Delay Time
450 NanoSeconds
Fall Time tf
400 NanoSeconds
trr
200 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
200 Amps
Source Current Is(rms)
200 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
2 MilliOhms
Vds(on)
0.4 Volts DC
Turn on Delay Time
400 NanoSeconds
Rise Time tr
400 NanoSeconds
Turn off Delay Time
450 NanoSeconds
Fall Time tf
300 NanoSeconds
trr
250 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
300 Amps
Source Current Is(rms)
300 Amps
Drain Source Voltage Vds
75 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
0.73 MilliOhms
Vds(on)
0.22 Volts DC
Turn on Delay Time
450 NanoSeconds
Rise Time tr
600 NanoSeconds
Turn off Delay Time
600 NanoSeconds
Fall Time tf
600 NanoSeconds
trr
200 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
300 Amps
Source Current Is(rms)
300 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
1.1 MilliOhms
Vds(on)
0.33 Volts DC
Turn on Delay Time
400 NanoSeconds
Rise Time tr
600 NanoSeconds
Turn off Delay Time
600 NanoSeconds
Fall Time tf
400 NanoSeconds
trr
250 NanoSeconds
Product Description: MOSFET MODULE
Drain Current Id(rms)
300 Amps
Source Current Is(rms)
300 Amps
Drain Source Voltage Vds
150 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Drain Cutoff Current
1 MilliAmps
Typ. Vgs(th)
7.3 Volts DC
Gate Leakage Current
1.5 MicroAmps
rDS(on)
2.2 MilliOhms
Vds(on)
0.66 Volts DC
Turn on Delay Time
400 NanoSeconds
Rise Time tr
400 NanoSeconds
Turn off Delay Time
500 NanoSeconds
Fall Time tf
400 NanoSeconds
trr
200 NanoSeconds

Vishay

Item Number IRC540
SeriesHEXFET
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Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 29A 100V .77OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
28 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
77 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
77 NanoSeconds
Turn off Delay Time
40 NanoSeconds
Fall Time tf
48 NanoSeconds
trr
120 NanoSeconds
1 - 20 of 872 Matches