Transistors | MOSFETs | Product Catalog Search Results | Galco Industrial Electronics

  Working...

MOSFETs

1 - 20 of 864 Matches
Show  Items / Page 
Product Description: NCHAN,SOT-227,100V,190A,0.0065OHM, RoHS, Replaces FB180SA10
Package
SOT-227
Drain Current Id(rms)
190 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3.3 Volts DC
Gate Leakage Current
0.2 MicroAmps
rDS(on)
6.5 MilliOhms
Turn on Delay Time
45 NanoSeconds
Rise Time tr
351 NanoSeconds
Turn off Delay Time
181 NanoSeconds
Fall Time tf
335 NanoSeconds
trr
300 NanoSeconds
RoHS
Yes
Product Description: NCHAN 28A 100V 0.077OHM TO-220AB
Package
TO-220AB
Circuit Type
N-Channel
Drain Current Id(rms)
28 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
77 MilliOhms
Turn on Delay Time
11 NanoSeconds
Rise Time tr
44 NanoSeconds
Turn off Delay Time
53 NanoSeconds
Fall Time tf
43 NanoSeconds
trr
180 NanoSeconds
RoHS
Yes
Product Description: PCHAN, TO-220AB, 100V
Package
TO-220AB
Circuit Type
P-Channel
Drain Current Id(rms)
6.8 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
600 MilliOhms
Turn on Delay Time
9.6 NanoSeconds
Rise Time tr
29 NanoSeconds
Turn off Delay Time
21 NanoSeconds
Fall Time tf
25 NanoSeconds
trr
98 NanoSeconds
RoHS
Yes
Product Description: NCHAN, HEXDIP, 60V
Package
HVMDIP
Circuit Type
N-Channel
Drain Current Id(rms)
1.7 Amps
Drain Source Voltage Vds
60 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
200 MilliOhms
Turn on Delay Time
10 NanoSeconds
Rise Time tr
50 NanoSeconds
Turn off Delay Time
13 NanoSeconds
Fall Time tf
19 NanoSeconds
trr
70 NanoSeconds
RoHS
Yes

Vishay

Item Number IRFD024
SeriesHVMDIP
In Stock

Order will ship 10/23/17
Need It Sooner?

Product Description: NCHAN 2.5A 60V 0.10OHM HD-1
Package
HVMDIP
Circuit Type
N-Channel
Drain Current Id(rms)
2.5 Amps
Drain Source Voltage Vds
60 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
100 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
58 NanoSeconds
Turn off Delay Time
25 NanoSeconds
Fall Time tf
42 NanoSeconds
trr
80 NanoSeconds
Product Description: PCHAN, HEXDIP, 100V
Package
HVMDIP
Circuit Type
P-Channel
Drain Current Id(rms)
1 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
600 MilliOhms
Turn on Delay Time
9.6 NanoSeconds
Rise Time tr
29 NanoSeconds
Turn off Delay Time
21 NanoSeconds
Fall Time tf
25 NanoSeconds
trr
98 NanoSeconds
RoHS
Yes
Product Description: NCHAN, TO-220F, 600V, 5.5A
Package
TO-220 FULLPAK
Circuit Type
N-Channel
Drain Current Id(rms)
5.5 Amps
Drain Source Voltage Vds
600 Volts DC
Gate Source Voltage Vgss
30 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
750 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
25 NanoSeconds
Turn off Delay Time
30 NanoSeconds
Fall Time tf
22 NanoSeconds
trr
530 NanoSeconds
RoHS
Yes
Product Description: NCHAN, TO-247AC, 250V, 38A
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
38 Amps
Drain Source Voltage Vds
250 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
75 MilliOhms
Turn on Delay Time
22 NanoSeconds
Rise Time tr
99 NanoSeconds
Turn off Delay Time
110 NanoSeconds
Fall Time tf
92 NanoSeconds
trr
410 NanoSeconds
RoHS
Yes
Product Description: NCHAN, TO-247AC, 400V, 16A
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
16 Amps
Drain Source Voltage Vds
400 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
300 MilliOhms
Turn on Delay Time
16 NanoSeconds
Rise Time tr
49 NanoSeconds
Turn off Delay Time
87 NanoSeconds
Fall Time tf
47 NanoSeconds
trr
380 NanoSeconds
RoHS
Yes
Product Description: NCHAN 20A 500V 0.27OHM TO-247
Package
TO-247AC
Circuit Type
N-Channel
Drain Current Id(rms)
20 Amps
Drain Source Voltage Vds
500 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
270 MilliOhms
Turn on Delay Time
18 NanoSeconds
Rise Time tr
59 NanoSeconds
Turn off Delay Time
110 NanoSeconds
Fall Time tf
58 NanoSeconds
trr
570 NanoSeconds
Product Description: Transistor, 20A, 600V, TO-247
Drain Current Id(rms)
20 Amps
Drain Source Voltage Vds
600 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
4.5 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
190 MilliOhms
Turn on Delay Time
120 NanoSeconds
Rise Time tr
25 NanoSeconds
Turn off Delay Time
130 NanoSeconds
Fall Time tf
30 NanoSeconds
trr
610 NanoSeconds
RoHS
Yes

Vishay

Item Number IRC540
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 29A 100V .77OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
28 Amps
Drain Source Voltage Vds
100 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
77 MilliOhms
Turn on Delay Time
13 NanoSeconds
Rise Time tr
77 NanoSeconds
Turn off Delay Time
40 NanoSeconds
Fall Time tf
48 NanoSeconds
trr
120 NanoSeconds

Vishay

Item Number IRC634
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 8.1A 250V .45OHM TO-220 HEXSEN
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
8.1 Amps
Drain Source Voltage Vds
250 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
450 MilliOhms
Turn on Delay Time
9.6 NanoSeconds
Rise Time tr
21 NanoSeconds
Turn off Delay Time
42 NanoSeconds
Fall Time tf
19 NanoSeconds
trr
220 NanoSeconds

Vishay

Item Number IRC640
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 18A 200V .18OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
18 Amps
Drain Source Voltage Vds
200 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
180 MilliOhms
Turn on Delay Time
14 NanoSeconds
Rise Time tr
51 NanoSeconds
Turn off Delay Time
45 NanoSeconds
Fall Time tf
36 NanoSeconds
trr
300 NanoSeconds

Vishay

Item Number IRC644
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 14A 250V .28OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
14 Amps
Drain Source Voltage Vds
250 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
280 MilliOhms
Turn on Delay Time
12 NanoSeconds
Rise Time tr
37 NanoSeconds
Turn off Delay Time
49 NanoSeconds
Fall Time tf
29 NanoSeconds
trr
310 NanoSeconds

Vishay

Item Number IRC730
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 5.5A 400V 1.0OHM TO-220 HEXSEN
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
5.5 Amps
Drain Source Voltage Vds
400 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
1000 MilliOhms
Turn on Delay Time
18 NanoSeconds
Rise Time tr
15 NanoSeconds
Turn off Delay Time
38 NanoSeconds
Fall Time tf
14 NanoSeconds
trr
260 NanoSeconds

Vishay

Item Number IRC740
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 10A 400V .55OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
10 Amps
Drain Source Voltage Vds
400 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
550 MilliOhms
Turn on Delay Time
14 NanoSeconds
Rise Time tr
25 NanoSeconds
Turn off Delay Time
54 NanoSeconds
Fall Time tf
24 NanoSeconds
trr
330 NanoSeconds

Vishay

Item Number IRC830
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 4.5A 500V 1.50OHM TO-220 HEXSE
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
4.5 Amps
Drain Source Voltage Vds
500 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
1500 MilliOhms
Turn on Delay Time
8.2 NanoSeconds
Rise Time tr
16 NanoSeconds
Turn off Delay Time
42 NanoSeconds
Fall Time tf
16 NanoSeconds
trr
320 NanoSeconds

Vishay

Item Number IRC840
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: NCHAN 8A 500V 0.85OHM TO-220 HEXSENS
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
8 Amps
Drain Source Voltage Vds
500 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
850 MilliOhms
Turn on Delay Time
14 NanoSeconds
Rise Time tr
22 NanoSeconds
Turn off Delay Time
55 NanoSeconds
Fall Time tf
21 NanoSeconds
trr
410 NanoSeconds

Vishay

Item Number IRCZ24
SeriesHEXFET
Get Quote

Est. Lead Time: 28 daysNeed It Sooner?

Product Description: TRANSISTOR 17A 60V 0.10OHM TO-220
Package
TO-220
Circuit Type
N-Channel
Drain Current Id(rms)
26 Amps
Drain Source Voltage Vds
55 Volts DC
Gate Source Voltage Vgss
20 Volts DC
Typ. Vgs(th)
3 Volts DC
Gate Leakage Current
0.1 MicroAmps
rDS(on)
40 MilliOhms
Turn on Delay Time
12 NanoSeconds
Rise Time tr
59 NanoSeconds
Turn off Delay Time
25 NanoSeconds
Fall Time tf
38 NanoSeconds
trr
87 NanoSeconds
1 - 20 of 864 Matches