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7 Items

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  1. SIHB22N60S-E3
    SIHB22N60S-E3
    Vishay Transistors, S Series
    Item Number
    SIHB22N60S-E3
    MFG Item Number
    SIHB22N60S-E3
    Series
    S
    Product Description
    N-CHANNEL 600V SIHB22N60S-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 600 VDC
    Drain Current Id(rms) 22 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 3 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 190 mOhm
    Turn On Delay Time 24 ns
    Rise Time tr 68 ns
    Turn Off Delay Time 77 ns
    Fall Time tf 59 ns
    Trr 462 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  2. SIHF22N60S-E3
    SIHF22N60S-E3
    Vishay Transistors, S Series
    Item Number
    SIHF22N60S-E3
    MFG Item Number
    SIHF22N60S-E3
    Series
    S
    Product Description
    N-CHANNEL 600V SIHF22N60S-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 600 VDC
    Drain Current Id(rms) 22 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 3 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 190 mOhm
    Turn On Delay Time 24 ns
    Rise Time tr 68 ns
    Turn Off Delay Time 77 ns
    Fall Time tf 59 ns
    Trr 462 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  3. SIHF8N50L-E3
    SIHF8N50L-E3
    Vishay Transistors, S Series
    Item Number
    SIHF8N50L-E3
    MFG Item Number
    SIHF8N50L-E3
    Series
    S
    Product Description
    N-CHANNEL 500V SIHF8N50L-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 500 VDC
    Drain Current Id(rms) 8 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 3 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 1,000 mOhm
    Turn On Delay Time 17.3 ns
    Rise Time tr 35 ns
    Turn Off Delay Time 23.6 ns
    Fall Time tf 17 ns
    Trr 63 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  4. SIHG20N50C-E3
    SIHG20N50C-E3
    Vishay Transistors, S Series
    Item Number
    SIHG20N50C-E3
    MFG Item Number
    SIHG20N50C-E3
    Series
    S
    Product Description
    N-CHANNEL 500V SIHG20N50C-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 500 VDC
    Drain Current Id(rms) 20 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 4 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 270 mOhm
    Turn On Delay Time 80 ns
    Rise Time tr 27 ns
    Turn Off Delay Time 32 ns
    Fall Time tf 44 ns
    Trr 503 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  5. SIHG22N60S-E3
    SIHG22N60S-E3
    Vishay Transistors, S Series
    Item Number
    SIHG22N60S-E3
    MFG Item Number
    SIHG22N60S-E3
    Series
    S
    Product Description
    N-CHANNEL 600V SIHG22N60S-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 600 VDC
    Drain Current Id(rms) 22 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 3 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 190 mOhm
    Turn On Delay Time 24 ns
    Rise Time tr 68 ns
    Turn Off Delay Time 77 ns
    Fall Time tf 59 ns
    Trr 462 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  6. SIHP18N50C-E3
    SIHP18N50C-E3
    Vishay Transistors, S Series
    Item Number
    SIHP18N50C-E3
    MFG Item Number
    SIHP18N50C-E3
    Series
    S
    Product Description
    N-CHANNEL 500V SIHP18N50C-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 500 VDC
    Drain Current Id(rms) 18 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 4 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 225 mOhm
    Turn On Delay Time 80 ns
    Rise Time tr 27 ns
    Turn Off Delay Time 32 ns
    Fall Time tf 44 ns
    Trr 503 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
  7. SIHP22N60S-E3
    SIHP22N60S-E3
    Vishay Transistors, S Series
    Item Number
    SIHP22N60S-E3
    MFG Item Number
    SIHP22N60S-E3
    Series
    S
    Product Description
    N-CHANNEL 600V SIHP22N60S-E3
    Specifications
    Specifications
    Circuit Type N-Channel
    Drain Source Voltage Vds 600 VDC
    Drain Current Id(rms) 22 A
    Gate Source Voltage Vgss 30 VDC
    Typ. Vgs(th) 3 VDC
    Gate Leakage Current 0.1 µA
    rDS(on) 190 mOhm
    Turn On Delay Time 24 ns
    Rise Time tr 68 ns
    Turn Off Delay Time 77 ns
    Fall Time tf 59 ns
    Trr 462 ns
    Increase
    Decrease
    Availability
    Order by 5:00 PM ET and your package will ship the same day.
per page

Semiconductors

Semiconductor devices are discrete, powerful electronic components that use the properties of semiconductors to provide utility.

Power modules contain power semiconductor devices like IGBTs and MOSFETs, and help provide fast switching and significant signal amplification.

Diodes and their variations perform several different functions. Light-emitting diodes (LEDs) are highly efficient semiconductor light sources that offer very high brightness, multiple wavelengths and colors, and high switching rates. Bridge rectifiers arrange several diodes in a bridge circuit and convert alternating current into direct current.

The most common semiconductor device is the transistor, which are used to amplify or switch signals and power. Transistors are fundamental in modern electronics, and deliver unparalleled power, speed, logic and efficiency to electronic components in every application.

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