Third Generation HEXFETs provide the designer with the best combination of fast switching, ruggedized device design, low on‑resistance and cost‑effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF‑series equivalent part numbers. The provision of a Kelvin source connection effectively eliminates problems of common source inductance when the HEXSense is used as a fast, high‑current switch in non‑current‑sensing applications.
