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FF300R17KE3Infineon Transistors
Item NumberFF300R17KE3MFG Item NumberFF300R17KE3Product DescriptionIGBTSpecificationsSpecifications Type Dual Vces 1,700 VDC Ic 300 A vges+/- 20 V Ices Max 3 mA Iges Max 0.4 µA Vge(th) Min/Max 6.4 V Vce(sat) Max 2.45 V Width (mm) 106.4 mm Depth (mm) 61.4 mm Availability -
T640N18TOFInfineon SCRs, T640N SeriesItem NumberT640N18TOFMFG Item NumberT640N18TOFSeriesT640NProduct DescriptionSCR, TO-200AB-2, 1800V, 644ASpecificationsSpecifications Vdrm (Volts) 1,800 V Vrrm (Volts) 1,800 V Idrm Peak (mA) 0.05 mA Irrm Peak (mA) 0.05 mA It (rms) Amps 1,450 A It (avg) Amps 644 A Itsm Amps 9,400 A I2T@50Hz (A2Sec) 442,000 Vtm (Volts) 2.15 V dv/dt (V/microseconds) 1,000 di/dt (A/microseconds) 200 tq (microseconds) 250 µs Igt (mA) 250 mA Vgt (Volts) 2.2 V Junction Temperature 125 °F Availability -
T2510N02TOFInfineon SCRs, T2510N SeriesItem NumberT2510N02TOFMFG Item NumberT2510N02TOF VTSeriesT2510NProduct DescriptionSCR, TO-200AD, 200V, 2509ASpecificationsSpecifications Vdrm (Volts) 200 V Vrrm (Volts) 200 V Idrm Peak (mA) 0.15 mA Irrm Peak (mA) 0.15 mA It (rms) Amps 5,350 A It (avg) Amps 2,510 A Itsm Amps 46,000 A I2T@50Hz (A2Sec) 10,580,000 Vtm (Volts) 1.22 V dv/dt (V/microseconds) 1,000 di/dt (A/microseconds) 200 tq (microseconds) 200 µs Igt (mA) 250 mA Vgt (Volts) 1.5 V Junction Temperature 140 °F Availability -
T2510N04TOFInfineon SCRs, T2510N SeriesItem NumberT2510N04TOFMFG Item NumberT2510N04TOF VTSeriesT2510NProduct DescriptionSCR, TO-200AD, 400V, 2509ASpecificationsSpecifications Vdrm (Volts) 400 V Vrrm (Volts) 400 V Idrm Peak (mA) 0.15 mA Irrm Peak (mA) 0.15 mA It (rms) Amps 5,350 A It (avg) Amps 2,510 A Itsm Amps 46,000 A I2T@50Hz (A2Sec) 10,580,000 Vtm (Volts) 1.22 V dv/dt (V/microseconds) 1,000 di/dt (A/microseconds) 200 tq (microseconds) 200 µs Igt (mA) 250 mA Vgt (Volts) 1.5 V Junction Temperature 140 °F Availability -
T470N12TOFInfineon SCRs, T470N SeriesItem NumberT470N12TOFMFG Item NumberT470N12TOFSeriesT470NProduct DescriptionSCR, TO-200AB-1, 1200V, 470ASpecificationsSpecifications Vdrm (Volts) 1,200 V Vrrm (Volts) 1,200 V Idrm Peak (mA) 0.05 mA Irrm Peak (mA) 0.05 mA It (rms) Amps 1,060 A It (avg) Amps 470 A Itsm Amps 7,100 A I2T@50Hz (A2Sec) 252,000 Vtm (Volts) 1.85 V dv/dt (V/microseconds) 1,000 di/dt (A/microseconds) 150 tq (microseconds) 250 µs Igt (mA) 200 mA Vgt (Volts) 2 V Junction Temperature 125 °F Availability -
BSM400GA120DN2Infineon TransistorsItem NumberBSM400GA120DN2MFG Item NumberBSM400GA120DN2Product DescriptionIGBT 400A 1200V SINGLESpecificationsSpecifications Type Single Vces 1,200 VDC Ic 400 A vges+/- 20 V Ices Max 8 mA Iges Max 0.4 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 3 V Circuit Type Single IGBT Width (mm) 106.4 mm Depth (mm) 61.4 mm Availability -
FF1400R17IP4PInfineon TransistorsItem NumberFF1400R17IP4PMFG Item NumberFF1400R17IP4PProduct DescriptionIGBT, Dual, 1700V, 1400ASpecificationsSpecifications Type Single Vces 1,700 VDC Ic 1,400 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 5.2-6.4 V Vce(sat) Max 2.8 V Circuit Type Half-Bridge Width (mm) 250 mm Depth (mm) 89 mm Availability -
FZ400R17KE4Infineon Transistors, 62mm SeriesItem NumberFZ400R17KE4MFG Item NumberFZ400R17KE4Series62mmProduct DescriptionIGBT, Single, 1700V, 400ASpecificationsSpecifications Type Single Vces 1,700 VDC Ic 400 A vges+/- 20 V Ices Max 1 mA Iges Max 0.1 µA Vge(th) Min/Max 5.2-6.4 V Vce(sat) Max 2.3 V Circuit Type Single IGBT Width (mm) 106.4 mm Depth (mm) 61.4 mm Availability -
DD81S14K-AInfineon Power ModulesItem NumberDD81S14K-AMFG Item NumberDD81S14K-AProduct DescriptionPMOD, CA-Diode, 1400V, 81A, Fast,Availability -
GATELEADL=750/0,5MPInfineon MiscellaneousItem NumberGATELEADL=750/0,5MPMFG Item NumberGATELEAD L=750/0 5 MPProduct DescriptionGate Lead, High Power Thyristor,Availability
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