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MFG Item Number
FF225R12ME4
Product Description
IGBT 225A 1200V DUAL
Specifications
Specifications
Type
Dual
Vces
1,200 VDC
Ic
225 A
vges+/-
20 V
Ices Max
0.003 mA
Iges Max
0.4 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.15 V
Circuit Type
Half-Bridge
Width (mm)
152.1 mm
Depth (mm)
62 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
FF300R12ME4-B11
MFG Item Number
FF300R12ME4_B11
Product Description
IGBT, Dual, 1200V, 300A, W/NTC,
Specifications
Specifications
Type
Dual
Vces
1,200 VDC
Ic
300 A
vges+/-
20 V
Ices Max
3 mA
Iges Max
0.4 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.1 V
Circuit Type
Half-Bridge
Width (mm)
152 mm
Depth (mm)
62.5 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
MFG Item Number
FF300R12ME4
Product Description
IGBT, Dual, 1200V, 300A, W/NTC
Specifications
Specifications
Type
Dual
Vces
1,200 VDC
Ic
300 A
vges+/-
20 V
Ices Max
3 mA
Iges Max
0.4 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.1 V
Circuit Type
Half-Bridge
Width (mm)
152.1 mm
Depth (mm)
62 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
MFG Item Number
FF300R17ME4
Specifications
Specifications
Type
Dual
Vces
1,700 VDC
Ic
300 A
vges+/-
20 V
Ices Max
3 mA
Iges Max
0.4 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.3 V
Circuit Type
Half-Bridge
Width (mm)
152.1 mm
Depth (mm)
62 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
FF600R07ME4-B11
MFG Item Number
FF600R07ME4_B11
Specifications
Specifications
Type
Dual
Vces
650 VDC
Ic
600 A
vges+/-
20 V
Ices Max
1 mA
Iges Max
0.1 µA
Vge(th) Min/Max
4.9-6.5 V
Vce(sat) Max
1.95 V
Circuit Type
Half-Bridge
Width (mm)
152 mm
Depth (mm)
62.5 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
FF600R12ME4-B11
MFG Item Number
FF600R12ME4_B11
Specifications
Specifications
Type
Dual
Vces
1,200 VDC
Ic
600 A
vges+/-
20 V
Ices Max
3 mA
Iges Max
0.4 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.1 V
Circuit Type
Half-Bridge
Width (mm)
152 mm
Depth (mm)
62.5 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
MFG Item Number
FF600R17ME4
Product Description
IGBT, Dual, 1700V, 600A
Specifications
Specifications
Type
Dual
Vces
1,700 VDC
Ic
600 A
vges+/-
20 V
Ices Max
1 mA
Iges Max
0.1 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.3 V
Circuit Type
Half-Bridge
Width (mm)
152.1 mm
Depth (mm)
62 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
FF300R07ME4-B11
MFG Item Number
FF300R07ME4_B11
Specifications
Specifications
Type
Dual
Vces
650 VDC
Ic
300 A
vges+/-
20 V
Ices Max
0.001 mA
Iges Max
0.1 µA
Vge(th) Min/Max
5.1-6.4 V
Vce(sat) Max
1.95 V
Circuit Type
Half-Bridge
Width (mm)
152 mm
Depth (mm)
62.5 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
FF450R07ME4-B11
MFG Item Number
FF450R07ME4_B11
Specifications
Specifications
Type
Dual
Vces
650 VDC
Ic
450 A
vges+/-
20 V
Ices Max
0.001 mA
Iges Max
0.1 µA
Vge(th) Min/Max
5.1-6.4 V
Vce(sat) Max
1.95 V
Circuit Type
Half-Bridge
Width (mm)
152 mm
Depth (mm)
62.5 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
Item Number
F3L300R12ME4-B23
MFG Item Number
F3L300R12ME4_B23
Specifications
Specifications
Type
Three Level
Vces
1,200 VDC
Ic
300 A
vges+/-
20 V
Ices Max
1 mA
Iges Max
0.1 µA
Vge(th) Min/Max
5.2-6.4 V
Vce(sat) Max
2.1 V
Width (mm)
152.1 mm
Depth (mm)
62 mm
Availability
Order by 5:00 PM ET and your package will ship the same day.
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Category
Transistors
Manufacturer
Infineon
Product Series
EconoDUAL
Shopping Options
Semiconductors Semiconductor devices are discrete, powerful electronic components that use the properties of semiconductors to provide utility.
Power modules contain power semiconductor devices like IGBTs and MOSFETs, and help provide fast switching and significant signal amplification.
Diodes and their variations perform several different functions. Light-emitting diodes (LEDs) are highly efficient semiconductor light sources that offer very high brightness, multiple wavelengths and colors, and high switching rates. Bridge rectifiers arrange several diodes in a bridge circuit and convert alternating current into direct current.
The most common semiconductor device is the transistor, which are used to amplify or switch signals and power. Transistors are fundamental in modern electronics, and deliver unparalleled power, speed, logic and efficiency to electronic components in every application.
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