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FP35R12W2T4-B11Infineon Transistors, EasyPIM Series
Item NumberFP35R12W2T4-B11MFG Item NumberFP35R12W2T4_B11SeriesEasyPIMProduct DescriptionIPMSpecificationsSpecifications Ic 35 A Vces 1,200 V Brake Yes Temperature Sensor Yes Current Sensing Resistor No AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
FF200R12KE3Infineon TransistorsItem NumberFF200R12KE3MFG Item NumberFF200R12KE3Product DescriptionIGBT, Dual, 1200V, 200ASpecificationsSpecifications Type Dual Vces 1,200 VDC Ic 200 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 2.15 V Width (mm) 106.4 mm Depth (mm) 61.4 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
BSM25GD120DN2E3224Infineon TransistorsItem NumberBSM25GD120DN2E3224MFG Item NumberBSM25GD120DN2E3224Product DescriptionIGBT 25A 1200V SHORT-PINSSpecificationsSpecifications Type Six-Pack Vces 1,200 VDC Ic 25 A vges+/- 20 V Ices Max 0.8 mA Iges Max 0.18 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 3 V Width (mm) 107.5 mm Depth (mm) 45 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
FF300R12KS4Infineon TransistorsItem NumberFF300R12KS4MFG Item NumberFF300R12KS4Product DescriptionIGBT 300A 1200V DUALSpecificationsSpecifications Type Dual Vces 1,200 VDC Ic 300 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 3.75 V Width (mm) 106.4 mm Depth (mm) 61.4 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
SKM50GD125DSemikron Transistors
Item NumberSKM50GD125DMFG Item Number21918010Product DescriptionIGBT, Six-Pack, 1200V, 50ASpecificationsSpecifications Type Six-Pack Vces 1,200 VDC Ic 50 A vges+/- 20 V Ices Max 0.3 mA Vge(th) Min/Max 4.5-6.5 V Vce(sat) Max 3.7 V Width (mm) 105 mm Depth (mm) 45 mm Availability -
FF150R12KE3GInfineon TransistorsItem NumberFF150R12KE3GMFG Item NumberFF150R12KE3GProduct DescriptionIGBT, DUAL, 1200V, 150ASpecificationsSpecifications Type Dual Vces 1,200 VDC Ic 150 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 2.15 V Width (mm) 106.4 mm Depth (mm) 61.4 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
BSM15GD120DN2E3224Infineon TransistorsItem NumberBSM15GD120DN2E3224MFG Item NumberBSM15GD120DN2E3224Product DescriptionIGBT, SIX-PACK, 1200V, 15A, SHORTPINSpecificationsSpecifications Type Six-Pack Vces 1,200 VDC Ic 15 A vges+/- 20 V Ices Max 0.5 mA Iges Max 0.15 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 3 V Width (mm) 107.5 mm Depth (mm) 45 mm Availability -
FF400R12KE3Infineon TransistorsItem NumberFF400R12KE3MFG Item NumberFF400R12KE3Product DescriptionIGBTSpecificationsSpecifications Type Dual Vces 1,200 VDC Ic 400 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 2.15 V Width (mm) 106.4 mm Depth (mm) 61.4 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
FF450R12KT4Infineon TransistorsItem NumberFF450R12KT4MFG Item NumberFF450R12KT4Product DescriptionIGBT, Dual, 1200V, 450ASpecificationsSpecifications Type Dual Vces 1,200 VDC Ic 450 A vges+/- 20 V Ices Max 5 mA Iges Max 0.4 µA Vge(th) Min/Max 6.4 V Vce(sat) Max 2.15 V Width (mm) 106.4 mm Depth (mm) 61.4 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day. -
BSM75GD120DN2Infineon TransistorsItem NumberBSM75GD120DN2MFG Item NumberBSM75GD120DN2Product DescriptionIGBT 75A 1200V SIX-PACKSpecificationsSpecifications Vces 1,200 VDC Ic 75 A vges+/- 20 V Ices Max 1.5 mA Iges Max 0.32 µA Vge(th) Min/Max 6.5 V Vce(sat) Max 3 V Width (mm) 122 mm Depth (mm) 62 mm AvailabilityOrder by 5:00 PM ET and your package will ship the same day.
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Transistors
A transistor is a semiconductor device that can amplify or switch electronic signals. The transistor is a ubiquitous component, used in almost all modern electronic devices.
Transistors are useful for their gain property. A small signal applied to one pair of terminals can control a much larger signal at another pair of terminals. With this property, the transistor can be used in just about every amplifying and switching application, particularly in digital circuits.
The vast majority of transistors are built into integrated circuits. They are valued for their low power consumption, speed, and extremely small footprint. They are the primary requirement for advanced electronics like microchips and high-speed memory. Billions of discrete transistors are also produced every year, for industrial board design and equipment repair.
Transistors are useful for their gain property. A small signal applied to one pair of terminals can control a much larger signal at another pair of terminals. With this property, the transistor can be used in just about every amplifying and switching application, particularly in digital circuits.
The vast majority of transistors are built into integrated circuits. They are valued for their low power consumption, speed, and extremely small footprint. They are the primary requirement for advanced electronics like microchips and high-speed memory. Billions of discrete transistors are also produced every year, for industrial board design and equipment repair.